TEMSENSOPT

Smart optical device for temperature sensing.

2021-2023

«Proiecte«

Consortium

National Institute of Research and Development for Optoelectronics INOE 2000 Romania
IoT Internet of Things in Industrial Automation SL Spain
SITEX 45 Romania
University of Navarra Spain

Project

The innovation regarding the state of the art is related to:
1) Achievement of complex nanostructured materials based on innovative PbS and PbSe, QDs-doped phosphate­silicate thin films having enhanced luminescence and temperature sensitivity properties (high luminescence quantum efficiency, fast response, reproducibility under thermal cycling by temperature raising and cooling) for NIR domain as well as improved chemical and thermal stability by adding Al2O3, TiO2, ZnO, ZrO2. According to the knowledge of the present proposal authors, PbS and PbSe QDs­doped phosphate­silicate sol­gel thin films with complex composition was not reported so far. These materials could be considered as novel and promising candidates, applied in temperature sensing devices
2) Achievement of an integrated prototype device based on innovative PbS/PbSe QDs­doped phosphate­silicate thin films having performing NIR luminescence efficiency and temperature sensitivity, simplicity, reliability and reproducibility, short response time, for real time noncontact temperature measurements applied for industrial environment protection.

Main objectives

1) Technology validation for synthesis of optical materials based on IV­VI QDs­doped phosphate­silicate thin films with temperature­dependent luminescence
2) Achieving a temperature sensing device that incorporates the synthesized materials. High luminescence efficiency, based on quantum confinement effect, causes QDs to become useful low cost optical indicators for luminescence­based temperature sensing systems operating up to 400oC.

Specific objectives

The specific objectives are consistent with the aim of the project
1) To develop a laboratory sol­gel technology for the synthesis of innovative PbS and PbSe QDs­doped phosphate­silicate thin films deposited by: a) spin coating technique on planar substrates (silicon/glass/quartz), and, as an alternative route, by b) dip coating technique in which the deposition occurs on optical fibers
2) To investigate the luminescence properties in dependence on temperature (up to 400oC), correlated with the quantum confinement effect of PbS and PbSe QDs embedded in phosphate­silicate thin films with complex composition (Al2O3, TiO2, ZnO, ZrO2 are added to improve chemical and thermal properties)
3) To perform an experimental demonstrative set­up followed by the prototype device that incorporate the innovative PbS and PbSe QDs­doped phosphate­silicate thin films with complex composition, showing the performing sensitivity to measure the environmental temperature changes, based on NIR luminescence variation.

«Proiecte«